document number: 81008 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 2.0, 29-jun-09 1 TSAL5300 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors description TSAL5300 is an infrared, 940 nm emitting diode in gaalas/gaas technology with high radiant power molded in a blue-gray plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 22 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared remote control units with high power requirements ? free air transmission systems ? infrared source for optical counters and card readers note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 96 11505 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSAL5300 45 22 940 800 ordering information ordering code packaging remarks package form TSAL5300 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? TSAL5300-msz tape and ammopack moq: 5000 pcs, 1000 pcs/ammopack t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81008 2 rev. 2.0, 29-jun-09 TSAL5300 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21211 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21212 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.6 3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 100 ma, t p = 20 ms i e 30 45 150 mw/sr i f = 1 a, t p = 100 s i e 260 350 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temperature coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 22 deg peak wavelength i f = 100 ma p 940 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1 a t r 500 ns fall time i f = 100 ma t f 800 ns i f = 1 a t f 500 ns virtual source diameter met hod: 63 % encircled energy d 2.3 mm
document number: 81008 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 2.0, 29-jun-09 3 TSAL5300 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radiant intensity/power vs. ambient temperature fig. 8 - relative radiant power vs. wavelength t p - p u lse d u ration (ms) 96 119 8 7 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i - for w ard c u rrent (a) f t p /t = 0.01 i fsm = 1 a (single p u lse) 0.05 0.1 0.5 1.0 v f - for w ard v oltage ( v ) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p /t = 0.001 0 i f - for w ard c u rrent (ma) 4 3 2 1 14327 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f - for w ard c u rrent (ma) i - radiant intensity (m w /sr) e - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c) 8 90 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 14291 - relati v e radiant po w er e rel i f = 100 ma 990 940
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81008 4 rev. 2.0, 29-jun-09 TSAL5300 vishay semiconductors high power infrared emitting diode, 940 nm, gaalas/gaas fig. 9 - relative radiant intensity vs. angular displacement package dimensions in millimeters 94 888 3 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 i e rel - relati v e radiant intensity ? - ang u lar displacement 34.4 0.55 <0.7 1.1 0.25 0.5 + 0.15 - 0.05 ? 5 0.15 2.54 nom. 0.5 + 0.15 - 0.05 ? 5. 8 0.15 8 .7 0.3 7.7 0.15 1 min. area not plane technical dra w ings according to di n specifications 6.544-525 8 .05-4 iss u e: 8 ; 19.05.09 96 12122 a c (3.6) 11.4 0.3 r2.49 (sphere)
document number: 81008 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 2.0, 29-jun-09 5 TSAL5300 high power infrared emitting diode, 940 nm, gaalas/gaas vishay semiconductors fig. 10 - ? 5 mm devices on tape ammopack the tape is folded in a concertina arrangement and laid in cardboard box. if components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked ?-?. if components are required with anode before cathode, then tape sh ould be taken from the side of the box marked ?+?. fig. 11 - tape direction tape dimensions TSAL5300 option h 0.5 mm quantity/box cs21z 22 1000 fsz 27 1000 gsz 29 1000 msz 25.5 1000 0.3 0.2 2.54 + 0.6 - 0.1 12.7 0.2 5.0 8 0.7 1 8 + 1 - 0.5 9 0.5 meas u re limit o v er 20 index-holes: 1 12 0.3 0.9 max. 6.35 0.7 ? 4 0.2 12.7 1 1 ?h? 2 19314 tape feed direction diodes: cathode b efore anode transistors: collector b efore emitter la b el tape feed direction c b a 94 8 667 diodes: anode b efore cathode transistors: emitter b efore collector
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